The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Dec. 03, 2021
Amplexia, Llc, Durham, NC (US);
X-fab Global Services Gmbh, Erfurt, DE;
Brendan Toner, Kuching, MY;
Zhengchao Liu, Kuching, MY;
Gary M. Dolny, Mountain Top, PA (US);
William R. Richards, Cary, NC (US);
Manoj Chandrika Reghunathan, Trivandrum, IN;
Stefan Eisenbrandt, Erfurt, DE;
Christoph Ellmers, Dresden, DE;
Amplexia, LLC, Durham, NC (US);
X-FAB Global Services GmbH, Erfurt, DE;
Abstract
Devices and methods for providing a power transistor structure with a shallow source region include implanting a dopant of a first dopant polarity into a drift region on a source side of a gate structure to form a body region, the body region being self-aligned to, and extending under, the gate structure, and producing a shallow body region wherein the source side hybrid contact mitigates punch through of the shallow self-aligned body region and suppresses triggering of a parasitic bipolar. A retrograde body well, of the first dopant polarity, may be disposed beneath, and noncontiguous with, the shallow self-aligned body region, wherein the retrograde body well improves the electric field profile of the shallow self-aligned body region. A variety of power transistor structures are produced from such devices and methods.