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For the Inventor, By the Inventor

Cary, NC, United States of America

William R Richards, Jr

This inventor holds 11 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignees: X-Fab Global Services Gmbh, Silicet, LLC, Amplexia, LLC. Active years: 1990-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: William R Richards, Jr. Retrieved from https://idiyas.com/inventor/william-r-richards-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11 

% Patents Active = 81.8

 

Average Co-Inventor Count = 3.8

ph-index = 6

Forward Citations = 72(Granted Patents)


Location History:

  • Chapel Hill, NC (US) (2018 - 2019)
  • Cary, NC (US) (1990 - 2023)

Company Filing History:

goldMedal5 out of 16 
 
X-Fab Global Services Gmbh
 patents
silverMedal4 out of 5 
 
Silicet, LLC
 patents
bronzeMedal3 out of 4 
 
Amplexia, LLC
 patents
4. 2 out of 17 
 
Sarda Technologies, Inc.
 patents
5. 1 out of 3,523 
 
Harris Corporation
 patents
6. 1 out of 32 
 
Thunderbird Technologies, Inc.
 patents
where one patent can have more than one assignee

Years Active: 1990-2024

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11 patents (USPTO):Explore Patents
1. 12113106 - LDMOS with self-aligned body and hybrid source (2024-10-08),
2. 11646371 - MOSFET transistors with hybrid contact (2023-05-09),
3. 11522053 - LDMOS with self-aligned body and hybrid source (2022-12-06),
4. 11322611 - Methods for LDMOS and other MOS transistors with hybrid contact (2022-05-03),
5. 10892362 - Devices for LDMOS and other MOS transistors with hybrid contact (2021-01-12),
6. 10511303 - Gate driver for depletion-mode transistors (2019-12-17),
7. 10510869 - Devices and methods for a power transistor having a Schottky or Schottky-like contact (2019-12-17),
8. 9947787 - Devices and methods for a power transistor having a schottky or schottky-like contact (2018-04-17),
9. 9774322 - Gate driver for depletion-mode transistors (2017-09-26),
10. 5786620 - Fermi-threshold field effect transistors including source/drain pocket (1998-07-28),
11. 4956306 - Method for forming complementary patterns in a semiconductor material (1990-09-11),

Title: The Innovations of William R. Richards, Jr.

Introduction

William R. Richards, Jr. is an esteemed inventor based in Cary, NC, with an impressive portfolio of 11 patents to his name. His contributions to the field of power transistors and semiconductor devices have significantly advanced technology and innovation in the industry.

Latest Patents

Among his latest patents are groundbreaking inventions related to LDMOS and MOSFET transistors. One patent focuses on LDMOS with a self-aligned body and hybrid source, which presents devices and methods for creating a power transistor structure with a shallow source region. This invention includes the implantation of a dopant to form a body region that is self-aligned to the gate structure, significantly improving the electric field profile to enhance transistor performance.

Another notable patent pertains to MOSFET transistors with a hybrid contact, detailing a lateral DMOS transistor structure. This design incorporates various regions and junctions, including a Schottky junction and an ohmic junction, that work together to enhance the efficiency and effectiveness of the transistor.

Career Highlights

Over the years, Richards has made noteworthy contributions while working with prominent companies such as X-Fab Global Services GmbH and Silicet, LLC. His expertise in power devices has cemented his status as a significant figure in semiconductor innovation.

Collaborations

During his career, Richards has collaborated with skilled professionals, including Gary M. Dolny and Zhengchao Liu. These partnerships have likely fostered a creative environment resulting in the development of advanced technologies and inventions.

Conclusion

William R. Richards, Jr. continues to stand out in the field of semiconductor innovation. His extensive portfolio of patents showcases his commitment to improving electronic devices and power transistors. Richards' work exemplifies the spirit of innovation, contributing remarkable advancements that pave the way for future technological developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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