The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 2011
Filed:
Feb. 02, 2010
Hamza Yilmaz, Saratoga, CA (US);
Daniel Calafut, San Jose, CA (US);
Christopher Boguslaw Kocon, Mountaintop, PA (US);
Steven P. Sapp, Santa Cruz, CA (US);
Dean E. Probst, West Jordan, UT (US);
Nathan L. Kraft, Pottsville, PA (US);
Thomas E. Grebs, Mountaintop, PA (US);
Rodney S. Ridley, Scarborough, ME (US);
Gary M. Dolny, Mountaintop, PA (US);
Bruce D. Marchant, Murray, UT (US);
Joseph A. Yedinak, Mountaintop, PA (US);
Hamza Yilmaz, Saratoga, CA (US);
Daniel Calafut, San Jose, CA (US);
Christopher Boguslaw Kocon, Mountaintop, PA (US);
Steven P. Sapp, Santa Cruz, CA (US);
Dean E. Probst, West Jordan, UT (US);
Nathan L. Kraft, Pottsville, PA (US);
Thomas E. Grebs, Mountaintop, PA (US);
Rodney S. Ridley, Scarborough, ME (US);
Gary M. Dolny, Mountaintop, PA (US);
Bruce D. Marchant, Murray, UT (US);
Joseph A. Yedinak, Mountaintop, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A field effect transistor includes a body region of a first conductivity type in a semiconductor region of a second conductivity type. A gate trench extends through the body region and terminating within the semiconductor region. A source region of the second conductivity type extends in the body region adjacent the gate trench. The source region and an interface between the body region and the semiconductor region define a channel region therebetween which extends along the gate trench sidewall. A channel enhancement region of the second conductivity type is formed adjacent the gate trench. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region.