Babak S Sani

Title: Babak S Sani: Innovator in Power Semiconductor Devices

Introduction

Babak S Sani is a prominent inventor based in Oakland, CA. He has made significant contributions to the field of power semiconductor devices, holding a total of 5 patents. His innovative methods have advanced the technology used in semiconductor devices, particularly in the design and functionality of these components.

Latest Patents

Babak Sani's latest patents include methods related to power semiconductor devices with thick bottom oxide layers. This method involves forming a drift region and a well region, along with an active trench that extends through the well region and into the drift region. Additionally, it includes the formation of source regions in contact with the active trench and a charge control trench aligned parallel to it. Another notable patent focuses on methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices. This method outlines the process of lining a trench with dielectric material, filling it with conductive material, and forming electrodes while ensuring proper isolation.

Career Highlights

Babak Sani is currently employed at Fairchild Semiconductor Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in developing advanced technologies that enhance the performance and efficiency of power semiconductor devices.

Collaborations

Throughout his career, Babak has collaborated with notable colleagues such as Steven Paul Sapp and Peter H Wilson. These collaborations have contributed to the successful development of various semiconductor technologies.

Conclusion

Babak S Sani is a key figure in the field of power semiconductor devices, with a strong portfolio of patents that reflect his innovative spirit. His contributions continue to shape the future of semiconductor technology.