The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Apr. 20, 2005
Applicants:
Robert Herrick, Lehi, UT (US);
Becky Losee, Cedar Hills, UT (US);
Dean Probst, West Jordan, UT (US);
Inventors:
Robert Herrick, Lehi, UT (US);
Becky Losee, Cedar Hills, UT (US);
Dean Probst, West Jordan, UT (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device is formed as follows. A plurality of trenches is formed in a silicon layer. An insulating layer filling an upper portion of each trench is formed. Exposed silicon is removed from adjacent the trenches to expose an edge of the insulating layer in each trench, such that the exposed edge of the insulating layer in each trench defines a portion of each contact opening formed between every two adjacent trenches.