The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Oct. 10, 2011
Robert Herrick, Lehi, UT (US);
Becky Losee, Cedar Hills, UT (US);
Dean Probst, West Jordan, UT (US);
Robert Herrick, Lehi, UT (US);
Becky Losee, Cedar Hills, UT (US);
Dean Probst, West Jordan, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A field effect transistor (FET) includes a plurality of trenches extending into a silicon layer, each trench having upper sidewalls that fan out. Contact openings extend into the silicon layer between adjacent trenches such that each trench and an adjacent contact opening form a common upper sidewall portion. Body regions extend between adjacent trenches. Source regions that are self-aligned to corresponding trenches extend in the body regions adjacent opposing sidewalls of each trench, and have a conductivity type opposite that of the body regions.