The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2008
Filed:
Jan. 05, 2006
Bruce Douglas Marchant, Murray, UT (US);
Thomas E. Grebs, Mountain Top, PA (US);
Rodney S. Ridley, Scarborough, ME (US);
Nathan Lawrence Kraft, Pottsville, PA (US);
Bruce Douglas Marchant, Murray, UT (US);
Thomas E. Grebs, Mountain Top, PA (US);
Rodney S. Ridley, Scarborough, ME (US);
Nathan Lawrence Kraft, Pottsville, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A trench-gated field effect transistor (FET) is formed as follows. Using one mask, a plurality of active gate trenches and at least one gate runner trench are defined and simultaneously formed in a silicon region such that (i) the at least one gate runner trench has a width greater than a width of each of the plurality of active gate trenches, and (ii) the plurality of active gate trenches are contiguous with the at least one gate runner trench.