The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2009
Filed:
Jun. 29, 2006
Thomas E. Grebs, Mountain Top, PA (US);
Nathan Lawrence Kraft, Pottsville, PA (US);
Rodney Ridley, Scarborough, ME (US);
Thomas E. Grebs, Mountain Top, PA (US);
Nathan Lawrence Kraft, Pottsville, PA (US);
Rodney Ridley, Scarborough, ME (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A field effect transistor is formed as follows. A trench is formed in a semiconductor region. A dielectric layer lining the trench sidewalls and bottom is formed. The trench is filled with a conductive material. The conductive material is recessed into the trench to thereby form a shield electrode in a bottom portion of the trench. The recessing of the conductive material includes isotropic etching of the conductive material. An inter-electrode dielectric (IED) is formed over the recessed shield electrode.