The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2013
Filed:
Mar. 07, 2011
Thomas E. Grebs, Mountain Top, PA (US);
Rodney S. Ridley, Mountain Top, PA (US);
Nathan Lawrence Kraft, Pottsville, PA (US);
Thomas E. Grebs, Mountain Top, PA (US);
Rodney S. Ridley, Mountain Top, PA (US);
Nathan Lawrence Kraft, Pottsville, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A method of forming a shielded gate field effect transistor includes: forming a plurality of active gate trenches in a silicon region; lining lower sidewalls and bottom of the active gate trenches with a shield dielectric; using a CMP process, filling a bottom portion of the active gate trenches with a shield electrode comprising polysilicon; forming an interpoly dielectric (IPD) over the shield electrode in the active gate trenches; lining upper sidewalls of the active gate trenches with a gate dielectric; and forming a gate electrode over the IPD in an upper portion of the active gate trenches.