The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2008
Filed:
Oct. 23, 2006
Nathan L. Kraft, Pottsville, PA (US);
Ashok Challa, Sandy, UT (US);
Steven P. Sapp, Felton, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Daniel Calafut, San Jose, CA (US);
Dean E. Probst, West Jordan, UT (US);
Rodney S. Ridley, Scarborough, ME (US);
Thomas E. Grebs, Mountaintop, PA (US);
Christopher B. Kocon, Mountaintop, PA (US);
Joseph A. Yedinak, Mountaintop, PA (US);
Gary M. Dolny, Mountaintop, PA (US);
Nathan L. Kraft, Pottsville, PA (US);
Ashok Challa, Sandy, UT (US);
Steven P. Sapp, Felton, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Daniel Calafut, San Jose, CA (US);
Dean E. Probst, West Jordan, UT (US);
Rodney S. Ridley, Scarborough, ME (US);
Thomas E. Grebs, Mountaintop, PA (US);
Christopher B. Kocon, Mountaintop, PA (US);
Joseph A. Yedinak, Mountaintop, PA (US);
Gary M. Dolny, Mountaintop, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A field effect transistor is formed as follows. Trenches are formed in a semiconductor region of a first conductivity type. Each trench is partially filled with one or more materials. A dual-pass angled implant is carried out to implant dopants of a second conductivity type into the semiconductor region through an upper surface of the semiconductor region and through upper trench sidewalls not covered by the one or more material. A high temperature process is carried out to drive the implanted dopants deeper into the mesa region thereby forming body regions of the second conductivity type between adjacent trenches. Source regions of the first conductivity type are then formed in each body region.