The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2013
Filed:
Mar. 29, 2011
Daniel M. Kinzer, El Segundo, CA (US);
Steven Sapp, Felton, CA (US);
Chung-lin Wu, San Jose, CA (US);
Oseob Jeon, Seoul, KR;
Bigildis Dosdos, San Jose, CA (US);
Daniel M. Kinzer, El Segundo, CA (US);
Steven Sapp, Felton, CA (US);
Chung-Lin Wu, San Jose, CA (US);
Oseob Jeon, Seoul, KR;
Bigildis Dosdos, San Jose, CA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
Systems and methods of fabricating Wafer Level Chip Scale Packaging (WLCSP) devices with transistors having source, drain and gate contacts on one side of the transistor while still having excellent electrical performance with low drain-to-source resistance R(on) include using a two-metal drain contact technique. The R(on) is further improved by using a through-silicon-via (TSV) technique to form a drain contact or by using a copper layer closely connected to the drain drift.