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For the Inventor, By the Inventor

Marseille, France

Romain Wacquez

This inventor holds 23 USPTO granted patents and 4 published patent applications and 8 EPO patents, primarily in Microelectronics Fabrication. Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, Stmicroelectronics (Crolles 2) Sas, STMicroelectronics. Active years: 2008-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Romain Wacquez. Retrieved from https://idiyas.com/inventor/romain-wacquez

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 82.6

 

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 48(Granted Patents)


Location History:

  • Grenoble, FR (2008 - 2015)
  • Marseille, FR (2015)
  • Albany, NY (US) (2018 - 2020)
  • Marseilles, FR (2014 - 2022)

Company Filing History:

goldMedal19 out of 8,836 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents
silverMedal4 out of 781 
 
Stmicroelectronics (Crolles 2) Sas
 patents
bronzeMedal2 out of 2,426 
 
STMicroelectronics
 patents
4. 2 out of 2,891 
 
Stmicroelectronics Gmbh
 patents
5. 1 out of 5,383 
 
Centre National De La Recherche Scientifique
 patents
6. 1 out of 238 
 
Université´ D'aix-Marseille
 patents
where one patent can have more than one assignee

Years Active: 2008-2025

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Areas of Expertise:
FD-SOI Technology
FET Transistors
Non-Volatile Memory
Microelectronic Devices
Physical Unclonable Function
Ion Implantation
Silicon Substrate
Three-Gate Transistor
Surface Coating
Isolation Trenches
Transistor Fabrication
Semiconductor Nanofingers
23 patents (USPTO):Explore Patents
1. 12456968 - Coherent sampling true random number generation in FD-SOI technology (2025-10-28),
2. 11264479 - Process for producing FET transistors (2022-03-01),
3. 10879083 - Method for modifying the strain state of a block of a semiconducting material (2020-12-29),
4. 10355207 - Method for forming a non-volatile memory cell, non-volatile memory cell formed according to said method and microelectronic device comprising such memory cells (2019-07-16),
5. 9991892 - Electronic device having a physical unclonable function identifier (2018-06-05),
6. 9673329 - Method for manufacturing a fin MOS transistor (2017-06-06),
7. 9570340 - Method of etching a crystalline semiconductor material by ion implantation and then chemical etching based on hydrogen chloride (2017-02-14),
8. 9460971 - Method to co-integrate oppositely strained semiconductor devices on a same substrate (2016-10-04),
9. 9437475 - Method for fabricating microelectronic devices with isolation trenches partially formed under active regions (2016-09-06),
10. 9437474 - Method for fabricating microelectronic devices with isolation trenches partially formed under active regions (2016-09-06),
11. 9396984 - Method of producing a microelectronic device in a monocrystalline semiconductor substrate with isolation trenches partially formed under an active region (2016-07-19),
12. 9236478 - Method for manufacturing a fin MOS transistor (2016-01-12),
13. 9231062 - Method for treating the surface of a silicon substrate (2016-01-05),
14. 9230991 - Method to co-integrate oppositely strained semiconductor devices on a same substrate (2016-01-05),
15. 8987854 - Microelectronic device with isolation trenches extending under an active area (2015-03-24),

Title: Romain Wacquez: Pioneering Innovator from Marseilles

Introduction:

Romain Wacquez, a brilliant inventor hailing from Marseilles, FR, is a name synonymous with cutting-edge innovation and excellence in the field of semiconductor technology. With an impressive portfolio of 22 patents under his belt, Wacquez's unwavering passion for pushing the boundaries of what is possible continues to inspire the next generation of inventors and entrepreneurs.

Latest Patents:

Among his latest patents is a groundbreaking "Process for producing FET transistors," a method that revolutionizes the production of field-effect transistors by utilizing a stack of layers to create semiconductor-on-insulator type substrates with unparalleled precision and efficiency. Additionally, Wacquez's "Method for modifying the strain state of a block of a semiconducting material" showcases his innovative approach to enhancing the performance of semiconductor materials through strategic strain manipulation.

Career Highlights:

Throughout his esteemed career, Wacquez has made significant contributions to renowned organizations such as Commissariat a l'Energie Atomique et aux Energies Alternatives and STMicroelectronics (Crolles 2) SAS. His expertise and groundbreaking inventions have not only propelled these companies to new heights but have also cemented his reputation as a trailblazer in the semiconductor industry.

Collaborations:

In his quest for innovation, Wacquez has collaborated with esteemed colleagues such as Maud Vinet and Laurent Grenouillet, fostering a culture of collaboration and knowledge-sharing that has been instrumental in driving forward-thinking research and development initiatives.

Conclusion:

Romain Wacquez's relentless pursuit of excellence and his pioneering spirit have left an indelible mark on the world of semiconductor technology. His groundbreaking inventions and unwavering dedication to innovation serve as a testament to the transformative power of human ingenuity, inspiring inventors and entrepreneurs to reach new heights of success and technological advancement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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