The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2016
Filed:
Feb. 28, 2014
Stmicroelectronics S.a., Montrouge, FR;
Commissariat À L'énergie Atomique ET Aux Énergies Alternatives, Paris, FR;
Yves Morand, Grenoble, FR;
Romain Wacquez, Marseilles, FR;
Laurent Grenouillet, Albany, NY (US);
Yannick Le Tiec, Crolles, FR;
Maud Vinet, Rives, FR;
STMicroelectronics SA, Montrouge, FR;
Commissariat A L'Energie Atomique et aux Energies Alternatives, Paris, FR;
Abstract
A method for manufacturing a fin MOS transistor from an SOI-type structure including a semiconductor layer on a silicon oxide layer coating a semiconductor support, this method including the steps of: a) forming, from the surface of the semiconductor layer, at least one trench delimiting at least one fin in the semiconductor layer and extending all the way to the surface of the semiconductor support; b) etching the sides of a portion of the silicon oxide layer located under the fin to form at least one recess under the fin; and c) filling the recess with a material selectively etchable over silicon oxide.