The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 16, 2019
Filed:
Mar. 21, 2018
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Universite D'aix-marseille, Marseilles, FR;
Centre National DE LA Recherche Scientifique (Cnrs), Paris, FR;
Alexis Krakovinsky, Gardanne, FR;
Marc Bocquet, Marseilles, FR;
Jean Coignus, Grenoble, FR;
Vincenzo Della Marca, St Victoret, FR;
Jean-Michel Portal, Saint-Savournin, FR;
Romain Wacquez, Marseilles, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
UNIVERSITE D'AIX-MARSEILLE, Marseilles, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS), Paris, FR;
Abstract
A method for forming a non-volatile memory cell intended to switch the memory cell from an unformed state to a formed state, the memory cell including an ordered stack of a lower electrode, a layer of insulating material and an upper electrode. The forming method includes a breakdown operation in which at least one laser shot is emitted towards the layer of insulating material to make the layer of insulating material active by making it pass from a high resistance state to a low resistance state, the memory cell being formed when the layer of insulating material is active.