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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9460971 B1

PDFFull Text
Date of Patent:
Oct. 04, 2016

Filed:

Dec. 01, 2015

Method to co-integrate oppositely strained semiconductor devices on a same substrate

Applicants:

Stmicroelectronics, Inc., Coppell, TX (US);

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Nicolas Loubet, Guilderland, NY (US);

Sylvain Maitrejean, Grenoble, FR;

Romain Wacquez, Marseilles, FR;

Assignees:

STMICROELECTRONICS, INC., Coppell, TX (US);

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;

Attorney:

Seed IP Law Group PLLC

Primary Examiner:

Thao P Le

Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/266 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/845 (2013.01); H01L 21/02381 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/266 (2013.01); H01L 21/26506 (2013.01); H01L 21/306 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823878 (2013.01); H01L 27/0922 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/7847 (2013.01); H01L 29/7848 (2013.01); H01L 29/7849 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01);
Abstract

Methods and structures for forming localized, differently-strained regions in a semiconductor layer on a substrate are described. An initial, unstrained, semiconductor-on-insulator substrate may be processed to form the differently-strained regions in the original semiconductor layer. The differently-strained regions may have opposite types of strain. The strains in the different regions may be formed independently.

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