The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Dec. 04, 2015
Stmicroelectronics SA, Montrouge, FR;
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Yves Morand, Grenoble, FR;
Romain Wacquez, Marseilles, FR;
Laurent Grenouillet, Albany, NY (US);
Yannick Le Tiec, Crolles, FR;
Maud Vinet, Rives, FR;
STMicroelectronics SA, Montrouge, FR;
Commissariat A L'Energie Atomique et aux Energies Alternatives, Paris, FR;
Abstract
A fin MOS transistor is made from an SOI-type structure that includes a semiconductor layer on a silicon oxide layer coating a semiconductor support. A trench formed from the surface of the semiconductor layer delimits at least one fin in the semiconductor layer, that trench extending at least to an upper surface of the semiconductor support. Etched recesses in sides of a portion of the silicon oxide layer located under the fin are filled with a material selectively etchable over silicon oxide.