The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Sep. 04, 2013
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Abstract
The invention provides a method of etching a crystalline semiconductor material (), the method being characterized in that it comprises: at least one ion implantation performed by implanting a plurality of ions () in at least one volume () of the semiconductor material () in such a manner as to make the semiconductor material amorphous in the at least one implanted volume (), and as to keep the semiconductor material () in a crystalline state outside () the at least one implanted volume (); and at least one chemical etching for selectively etching the amorphous semiconductor material relative to the crystalline semiconductor material, so as to remove the semiconductor material in the at least one volume () and so as to keep the semiconductor material outside () the at least one volume ().