The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2016
Filed:
Apr. 25, 2013
Commissariat a L'energie Atomique ET Aux Ene Alt, Paris, FR;
Yannick Le Tiec, Crolles, FR;
Laurent Grenouillet, Rives, FR;
Maud Vinet, Rives, FR;
Romain Wacquez, Marseilles, FR;
Abstract
The present invention relates to a method for chemically treating the surface condition of a silicon substrate for the roughness contrast characterized in that it comprises at least two successive treatment cycles, with each treatment cycle comprising a first step including placing in contact the silicon substrate with a first solution containing water diluted hydrofluoric (HF) acid and then a second step carried out at a temperature of less than 40° C., comprising placing in contact the silicon layer with a second solution containing water (HO) diluted ammonium hydroxide (NHOH) and hydrogen peroxide (HO), in order to obtain a roughness of less than 0.100 nanometer on a 1 μm×1 μm area upon completion of the treatment cycles. The invention will be applied in the field of microelectronics for the production of transistors, of surfaces for photovoltaic panels or for direct molecular bonding.