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For the Inventor, By the Inventor

Scotts Valley, CA, United States of America

Reza Arghavani

This inventor holds 56 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Intel Corporation, Applied Materials, Inc., Lam Research Corporation. Active years: 1998-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Reza Arghavani. Retrieved from https://idiyas.com/inventor/reza-arghavani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 56 

% Patents Active = 67.9


Average Co-Inventor Count = 3.3

ph-index = 18

Forward Citations = 2,434(Granted Patents)

Forward Citations (Not Self Cited) = 2,401(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Terrace Aloha, OR (US) (2000)
  • Santa Clara, CA (US) (2006)
  • Aloha, OR (US) (1998 - 2012)
  • Scotts Valley, CA (US) (2006 - 2022)

Company Filing History:

goldMedal27 out of 56,322 
 
Intel Corporation
 patents
silverMedal15 out of 14,454 
 
Applied Materials, Inc.
 patents
bronzeMedal9 out of 3,945 
 
Lam Research Corporation
 patents
4. 2 out of 77 
 
Mie Fujitsu Semiconductor Limited
 patents
5. 2 out of 1,051 
 
Tohoku University
 patents
6. 1 out of 88 
 
Suvolta, Inc.
 patents

Years Active: 1998-2022

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Areas of Expertise:
Cobalt Alloys
3-D IC Transistors
Silicon Germanium
Patterning Techniques
High-k Dielectrics
Non-Volatile Memory
Field Effect Transistor
Dielectric Etch
Plasma Doping
Gate Stack
Memory Cells
Low Thermal Budget
56 patents (USPTO):Explore Patents
1. 11380619 - Semiconductor devices including cobalt alloys and fabrication methods thereof (2022-07-05),
2. 11011379 - Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors (2021-05-18),
3. 10796995 - Semiconductor devices including a first cobalt alloy in a first barrier layer and a second cobalt alloy in a second barrier layer (2020-10-06),
4. 10741405 - Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing mask (2020-08-11),
5. 10559468 - Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors (2020-02-11),
6. 10068981 - Rare earth metal surface-activated plasma doping on semiconductor substrates (2018-09-04),
7. 10043672 - Selective self-aligned patterning of silicon germanium, germanium and type III/V materials using a sulfur-containing mask (2018-08-07),
8. 9997357 - Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors (2018-06-12),
9. 9922977 - Transistor with threshold voltage set notch and method of fabrication thereof (2018-03-20),
10. 9478411 - [object Object] (2016-10-25),
11. 9418987 - Transistor with threshold voltage set notch and method of fabrication thereof (2016-08-16),
12. 9396961 - Integrated etch/clean for dielectric etch applications (2016-07-19),
13. 9153486 - CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications (2015-10-06),
14. 8759872 - Transistor with threshold voltage set notch and method of fabrication thereof (2014-06-24),
15. 8501568 - Method of forming flash memory with ultraviolet treatment (2013-08-06),

Title: The Innovative Work of Inventor Reza Arghavani

Introduction:

Reza Arghavani, a prolific inventor based in Scotts Valley, CA, has made significant contributions to the field of semiconductor devices. With an impressive portfolio of 56 patents, his work has been instrumental in advancing technology in this domain.

Latest Patents:

Among his latest patents is a groundbreaking semiconductor device that features cobalt alloys in its fabrication method. This innovation showcases Arghavani's expertise in creating high-performance electronic components. Additionally, he has developed novel techniques for doping fin-shaped channel regions of 3-D IC transistors, highlighting his ongoing commitment to pushing the boundaries of semiconductor technology.

Career Highlights:

Arghavani has held positions at renowned companies such as Intel Corporation and Applied Materials, Inc., where he has applied his inventive skills to drive technological advancements. His tenure at these industry giants underscores his reputation as a pioneering force in the semiconductor sector.

Collaborations:

Throughout his career, Arghavani has collaborated with esteemed professionals in the field, including Robert S Chau and Samantha SiamHwa Tan. These partnerships have led to the successful development of cutting-edge technologies and have cemented Arghavani's standing as a collaborative innovator.

Conclusion:

In conclusion, Reza Arghavani stands out as a visionary inventor who continues to shape the landscape of semiconductor devices through his groundbreaking patents and collaborative efforts. His dedication to innovation and his profound impact on the industry make him a revered figure in the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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