The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 2018

Filed:

Dec. 13, 2016
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Daniel Peter, Campbell, CA (US);

Samantha Tan, Fremont, CA (US);

Reza Arghavani, Scotts Valley, CA (US);

Yang Pan, Los Altos, CA (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 21/02057 (2013.01); H01L 21/306 (2013.01); H01L 21/3081 (2013.01); H01L 21/3085 (2013.01); H01L 21/31058 (2013.01); H01L 21/31111 (2013.01);
Abstract

A method for patterning a substrate including multiple layers using a sulfur-based mask includes providing a substrate including a first layer and a second layer arranged on the first layer. The first layer includes a material selected from a group consisting of germanium, silicon germanium and type III/V materials. The method includes depositing a mask layer including sulfur species on sidewalls of the first layer and the second layer by exposing the substrate to a first wet chemistry. The method includes removing the mask layer on the sidewalls of the second layer while not completely removing the mask layer on the sidewalls of the first layer by exposing the substrate to a second wet chemistry. The method includes selectively etching the second layer relative to the first layer and the mask layer on the sidewalls of the first layer by exposing the substrate to a third wet chemistry.


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