The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2016
Filed:
Feb. 02, 2015
Lam Research Corporation, Fremont, CA (US);
Reza Arghavani, Scotts Valley, CA (US);
Shashank C. Deshmukh, San Ramon, CA (US);
Eric A. Hudson, Berkeley, CA (US);
Tom Kamp, San Jose, CA (US);
Samantha Tan, Fremont, CA (US);
Gerardo Adrian Delgadino, Milpitas, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
The embodiments herein relate to methods and apparatus for etching a recessed feature in dielectric material. In various embodiments, a recessed feature is formed in two etching operations. The first etching operation partially etches the features and may take place in a reactor configured to produce a capacitively coupled plasma. The first etching operation may end before the underlying semiconductor material experiences substantial damage due to penetration of ions through the dielectric atop the semiconductor material. The second etching operation may take place in a reactor configured to produce an inductively coupled plasma. Both the first and second etching operations may themselves be multi-step, cyclic processes.