The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Oct. 22, 2008
Mihaela Balseanu, Sunnyvale, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
Li-qun Xia, Cupertino, CA (US);
Atif Noori, Saratoga, CA (US);
Reza Arghavani, Scotts Valley, CA (US);
Derek R. Witty, Fremont, CA (US);
Amir Al-bayati, San Jose, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Atif Noori, Saratoga, CA (US);
Reza Arghavani, Scotts Valley, CA (US);
Derek R. Witty, Fremont, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A methods of forming a flash memory device are provided. The flash memory device comprises a silicon dioxide layer on a substrate and a silicon nitride layer that is formed on the silicon dioxide layer. The properties of the silicon nitride layer can be modified by any of: exposing the silicon nitride layer to ultraviolet radiation, exposing the silicon nitride layer to an electron beam, and by plasma treating the silicon nitride layer. A dielectric material is deposited on the silicon nitride layer and a conductive date is formed over the dielectric material. The flash memory device with modified silicon nitride layer provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.