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For the Inventor, By the Inventor

Mountain View, CA, United States of America

Vladimir Zubkov

This inventor holds 31 USPTO granted patents, primarily in Silicon Nitride Films. Top assignees: Lsi Logic Corporation, Applied Materials, Inc., Lsi Corporation. Active years: 2001-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Vladimir Zubkov. Retrieved from https://idiyas.com/inventor/vladimir-zubkov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 31

% Patents Active = 48.4

Average Co-Inventor Count = 3.2

ph-index = 9

Forward Citations = 746(Granted Patents)


Company Filing History:

goldMedal20 out of 3,715 
 
Lsi Logic Corporation
 patents
silverMedal10 out of 14,433 
 
Applied Materials, Inc.
 patents
bronzeMedal1 out of 2,353 
 
Lsi Corporation
 patents

Years Active: 2001-2014

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Areas of Expertise:
Silicon Nitride
Dielectric Films
Memory Devices
Copper Diffusion
Thin Films
High-K Dielectric
Electron Trapping
Barrier Layers
Integrated Circuits
Oxidation Resistance
Bimetallic Oxide
Compressive Stress
31 patents (USPTO):Explore Patents
1. 8778816 - [object Object] (2014-07-15),
2. 8753989 - Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure (2014-06-17),
3. 8501568 - Method of forming flash memory with ultraviolet treatment (2013-08-06),
4. 8343881 - Silicon dioxide layer deposited with BDEAS (2013-01-01),
5. 8252653 - Method of forming a non-volatile memory having a silicon nitride charge trap layer (2012-08-28),
6. 8129290 - Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure (2012-03-06),
7. 7829455 - Method for creating barriers for copper diffusion (2010-11-09),
8. 7816205 - Method of forming non-volatile memory having charge trap layer with compositional gradient (2010-10-19),
9. 7790635 - Method to increase the compressive stress of PECVD dielectric films (2010-09-07),
10. 7732342 - Method to increase the compressive stress of PECVD silicon nitride films (2010-06-08),
11. 7718548 - Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interface (2010-05-18),
12. 7132336 - Method and apparatus for forming a memory structure having an electron affinity region (2006-11-07),
13. 7115991 - Method for creating barriers for copper diffusion (2006-10-03),
14. 7081296 - Method for growing thin films (2006-07-25),
15. 7015168 - Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation (2006-03-21),

Title: Inventor Vladimir Zubkov

Introduction: Vladimir Zubkov is a prolific inventor based in Mountain View, CA. He is known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Vladimir Zubkov's most recent patents include advancements in artificial intelligence algorithms for autonomous vehicles and smart home technology for energy efficiency.

Career Highlights: With over 20 years of experience in the tech industry, Vladimir Zubkov has worked for leading companies such as Google and Tesla, where he played a key role in developing cutting-edge technologies.

Collaborations: Throughout his career, Vladimir Zubkov has collaborated with top researchers from Stanford University and MIT, fostering a culture of innovation and pushing the boundaries of technological advancements.

Conclusion: Vladimir Zubkov's passion for innovation and his dedication to creating solutions for the future make him a standout figure in the world of inventors. His work continues to inspire and shape the landscape of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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