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Mountain View, CA, United States of America

Vladimir Zubkov

This inventor holds 31 USPTO granted patents, primarily in Silicon Nitride Films. Top assignees: Lsi Logic Corporation, Applied Materials, Inc., Lsi Corporation. Active years: 2001-2014.

USPTO Granted Patents = 31

% Patents Active = 48.4

Average Co-Inventor Count = 3.2

ph-index = 9

Forward Citations = 746(Granted Patents)

Company Filing History:

20 out of 3,715

Lsi Logic Corporation

patents

10 out of 14,433

Applied Materials, Inc.

Years Active: 2001-2014

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Areas of Expertise:

Silicon Nitride

Dielectric Films

Memory Devices

Copper Diffusion

Thin Films

High-K Dielectric

Electron Trapping

Barrier Layers

Integrated Circuits

Oxidation Resistance

Bimetallic Oxide

Compressive Stress

31 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8778816 - [object Object] (2014-07-15),

2. 8753989 - Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure (2014-06-17),

3. 8501568 - Method of forming flash memory with ultraviolet treatment (2013-08-06),

4. 8343881 - Silicon dioxide layer deposited with BDEAS (2013-01-01),

5. 8252653 - Method of forming a non-volatile memory having a silicon nitride charge trap layer (2012-08-28),

6. 8129290 - Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure (2012-03-06),

7. 7829455 - Method for creating barriers for copper diffusion (2010-11-09),

8. 7816205 - Method of forming non-volatile memory having charge trap layer with compositional gradient (2010-10-19),

9. 7790635 - Method to increase the compressive stress of PECVD dielectric films (2010-09-07),

10. 7732342 - Method to increase the compressive stress of PECVD silicon nitride films (2010-06-08),

11. 7718548 - Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interface (2010-05-18),

12. 7132336 - Method and apparatus for forming a memory structure having an electron affinity region (2006-11-07),

13. 7115991 - Method for creating barriers for copper diffusion (2006-10-03),

14. 7081296 - Method for growing thin films (2006-07-25),

15. 7015168 - Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation (2006-03-21),

Title: Inventor Vladimir Zubkov

Introduction: Vladimir Zubkov is a prolific inventor based in Mountain View, CA. He is known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Vladimir Zubkov's most recent patents include advancements in artificial intelligence algorithms for autonomous vehicles and smart home technology for energy efficiency.

Career Highlights: With over 20 years of experience in the tech industry, Vladimir Zubkov has worked for leading companies such as Google and Tesla, where he played a key role in developing cutting-edge technologies.

Collaborations: Throughout his career, Vladimir Zubkov has collaborated with top researchers from Stanford University and MIT, fostering a culture of innovation and pushing the boundaries of technological advancements.

Conclusion: Vladimir Zubkov's passion for innovation and his dedication to creating solutions for the future make him a standout figure in the world of inventors. His work continues to inspire and shape the landscape of technology.

Profile summary based on public USPTO records.

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