The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2012

Filed:

Oct. 21, 2008
Applicants:

Mihaela Balseanu, Sunnyvale, CA (US);

Vladimir Zubkov, Mountain View, CA (US);

Li-qun Xia, Cupertino, CA (US);

Atif Noori, Saratoga, CA (US);

Reza Arghavani, Scotts Valley, CA (US);

Derek R. Witty, Fremont, CA (US);

Amir Al-bayati, San Jose, CA (US);

Inventors:

Mihaela Balseanu, Sunnyvale, CA (US);

Vladimir Zubkov, Mountain View, CA (US);

Li-Qun Xia, Cupertino, CA (US);

Atif Noori, Saratoga, CA (US);

Reza Arghavani, Scotts Valley, CA (US);

Derek R. Witty, Fremont, CA (US);

Amir Al-Bayati, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flash memory device and methods of forming a flash memory device are provided. The flash memory device includes a doped silicon nitride layer having a dopant comprising carbon, boron or oxygen. The doped silicon nitride layer generates a higher number and higher concentration of nitrogen and silicon dangling bonds in the layer and provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.


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