The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2010
Filed:
Dec. 05, 2007
Sang M. Lee, Cupertino, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
Zhenijiang Cui, San Jose, CA (US);
Meiyee Shek, Palo Alto, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Sang M. Lee, Cupertino, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
Zhenijiang Cui, San Jose, CA (US);
Meiyee Shek, Palo Alto, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma made from a reducing gas, where the second plasma removes copper oxide from the copper surface, and exposing the wafer to silane, where the silane reacts with the copper surface to selectively form copper silicide. The process may further include exposing the wafer to a third plasma made from ammonia and molecular nitrogen to form the copper silicon nitride layer.