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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Hichem M'Saad

This inventor holds 74 USPTO granted patents and 5 published patent applications, primarily in Plasma Processing (CPC class C23C). Top assignees: Applied Materials, Inc., Other. Active years: 2002-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hichem M'Saad. Retrieved from https://idiyas.com/inventor/hichem-m-saad

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 74 

% Patents Active = 47.3

Average Co-Inventor Count = 5.2

ph-index = 19

Forward Citations = 4,092(Granted Patents)

Forward Citations (Not Self Cited) = 4,031(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Sunnyvale, CA (US) (2010 - 2013)
  • Tunis, TN (2015)
  • Phoenix, AZ (US) (2018)
  • Santa Clara, CA (US) (2002 - 2020)

Company Filing History:

goldMedal73 out of 14,502 
 
Applied Materials, Inc.
 patents
silverMedal1 out of 834,601 
Other
 patents

Years Active: 2002-2020

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Areas of Expertise:
Plasma Chambers
Tunable Ground Planes
Silicon Nitride Films
Dielectric Films
PECVD
Cleaning Gas
Low K Dielectrics
Amorphous Carbon
Substrate Processing
UV Curing
Etch Resistivity
Chemical Vapor Deposition
74 patents (USPTO):Explore Patents
1. 10774423 - Tunable ground planes in plasma chambers (2020-09-15),
2. 10094486 - Method and system for supplying a cleaning gas into a process chamber (2018-10-09),
3. 9337072 - Apparatus and method for substrate clamping in a plasma chamber (2016-05-10),
4. 9206511 - Method and system for supplying a cleaning gas into a process chamber (2015-12-08),
5. 8753989 - Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure (2014-06-17),
6. 8591699 - Method and system for supplying a cleaning gas into a process chamber (2013-11-26),
7. 8445075 - Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics (2013-05-21),
8. 8389376 - Air gap integration scheme (2013-03-05),
9. 8382885 - Fluid filtration for substrate processing chamber (2013-02-26),
10. 8282734 - Methods to improve the in-film defectivity of PECVD amorphous carbon films (2012-10-09),
11. 8138104 - Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure (2012-03-20),
12. 8129290 - Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure (2012-03-06),
13. 8084105 - Method of depositing boron nitride and boron nitride-derived materials (2011-12-27),
14. 8043870 - CMP pad thickness and profile monitoring system (2011-10-25),
15. 7964442 - Methods to obtain low k dielectric barrier with superior etch resistivity (2011-06-21),

Title: The Innovative Journey of Hichem M'Saad

Introduction: Hichem M'Saad is a visionary inventor based in Santa Clara, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hichem M'Saad holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a background in computer science and engineering, Hichem M'Saad has had a prolific career working with leading tech companies in Silicon Valley, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Throughout his career, Hichem M'Saad has collaborated with top researchers, engineers, and developers to bring his innovative ideas to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Hichem M'Saad's relentless pursuit of innovation and his passion for creating cutting-edge technologies have solidified his reputation as a trailblazer in the world of inventions. His work continues to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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