The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2011
Filed:
Jun. 19, 2007
Jeong-uk Huh, Santa Clara, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Victor T. Nguyen, Novato, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Jeong-Uk Huh, Santa Clara, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Victor T. Nguyen, Novato, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.