The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Oct. 09, 2007
Huiwen Xu, Sunnyvale, CA (US);
Yijun Liu, San Jose, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Huiwen Xu, Sunnyvale, CA (US);
Yijun Liu, San Jose, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.