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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Huiwen Xu

USPTO Granted Patents = 24 

 

Average Co-Inventor Count = 2.9

ph-index = 7

Forward Citations = 783(Granted Patents)


Company Filing History:

goldMedal20 out of 669 
 
Sandisk 3d LLC
 patents
silverMedal4 out of 13,684 
 
Applied Materials, Inc.
 patents

Years Active: 2006-2014

where 'Filed Patents' based on already Granted Patents

24 patents (USPTO):
1. 8879299 - Non-volatile memory cell containing an in-cell resistor (2014-11-04),
2. 8658526 - Methods for increased array feature density (2014-02-25),
3. 8633528 - Methods and apparatus for increasing memory density using diode layer sharing (2014-01-21),
4. 8592793 - Electrode diffusions in two-terminal non-volatile memory devices (2013-11-26),
5. 8569730 - Carbon-based interface layer for a memory device and methods of forming the same (2013-10-29),
6. 8557685 - Memory cell that includes a carbon-based memory element and methods of forming the same (2013-10-15),
7. 8551855 - Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same (2013-10-08),
8. 8481396 - Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same (2013-07-09),
9. 8471360 - Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same (2013-06-25),
10. 8470646 - Modulation of resistivity in carbon-based read-writeable materials (2013-06-25),
11. 8467224 - Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom (2013-06-18),
12. 8466044 - Memory cell that includes a carbon-based memory element and methods forming the same (2013-06-18),
13. 8445075 - Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics (2013-05-21),
14. 8421050 - Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same (2013-04-16),
15. 8372740 - Methods for increased array feature density (2013-02-12),

Title: Innovations and Contributions of Huiwen Xu in Non-volatile Memory Technology

Introduction

Huiwen Xu, a prolific inventor based in Sunnyvale, CA, has made significant contributions to the field of memory technology, holding a remarkable portfolio of 24 patents. His work focuses on advancing non-volatile memory solutions, showcasing his expertise and innovative spirit in the field.

Latest Patents

Among his latest innovations is a patent for a non-volatile memory cell containing an in-cell resistor. This design includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor positioned in series with the steering element and the metal oxide storage element, as well as a second electrode. This invention demonstrates his commitment to improving memory technology performance. Another notable patent details methods for increased array feature density, which involves creating completely distinct first features above a substrate, forming sidewall spacers on these features, filling spaces between adjacent sidewall spacers with filler features, and ultimately removing the sidewall spacers, indicating an innovative approach to enhancing device scalability.

Career Highlights

Huiwen Xu has worked with leading companies in the technology sector, most notably SanDisk and Applied Materials, Inc. His experience in these industry giants has undoubtedly shaped his approach to innovation, allowing him to apply his expertise in practical applications that meet market needs.

Collaborations

Throughout his career, Huiwen has had the opportunity to collaborate with talented professionals such as Er-Xuan Ping and Li-Qun Xia. These collaborations have likely facilitated the exchange of innovative ideas and contributed to the development of groundbreaking technologies.

Conclusion

Huiwen Xu stands out as a key figure in the realm of memory technology innovations. With a commendable number of patents that highlight his expertise, he continues to push the boundaries of what's possible in non-volatile memory solutions. His contributions not only enhance technological advancements but also inspire future inventors in the field.

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