The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Jul. 18, 2012
Applicants:
Kun Hou, Milpitas, CA (US);
Yung-tin Chen, Santa Clara, CA (US);
Zhida Lan, San Jose, CA (US);
Huiwen Xu, Sunnyvale, CA (US);
Inventors:
Kun Hou, Milpitas, CA (US);
Yung-Tin Chen, Santa Clara, CA (US);
Zhida Lan, San Jose, CA (US);
Huiwen Xu, Sunnyvale, CA (US);
Assignee:
Sandisk 3D LLC, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/36 (2006.01); H01L 27/24 (2006.01); G11C 17/16 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0007 (2013.01); H01L 45/146 (2013.01); G11C 2213/72 (2013.01); H01L 45/04 (2013.01); G11C 2013/0073 (2013.01); H01L 27/2409 (2013.01); H01L 45/12 (2013.01); G11C 17/16 (2013.01); G11C 2213/71 (2013.01); G11C 13/0069 (2013.01); G11C 2213/51 (2013.01); G11C 2013/0083 (2013.01); H01L 45/1233 (2013.01); G11C 2213/32 (2013.01);
Abstract
A non-volatile memory cell includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor located in series with the steering element and the metal oxide storage element, and a second electrode.