The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 18, 2013

Filed:

Apr. 09, 2009
Applicants:

April D. Schricker, Palo Alto, CA (US);

Mark H. Clark, Santa Clara, CA (US);

Andy Fu, San Ramon, CA (US);

Huiwen Xu, Sunnyvale, CA (US);

Inventors:

April D. Schricker, Palo Alto, CA (US);

Mark H. Clark, Santa Clara, CA (US);

Andy Fu, San Ramon, CA (US);

Huiwen Xu, Sunnyvale, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 11/21 (2006.01);
U.S. Cl.
CPC ...
Abstract

In some aspects, a microelectronic structure is provided that includes (1) a first conducting layer; (2) a first dielectric layer formed above the first conducting layer and having a feature that exposes a portion of the first conducting layer; (3) a graphitic carbon film disposed on a sidewall of the feature defined by the first dielectric layer and in contact with the first conducting layer at a bottom of the feature; and (4) a second conducting layer disposed above and in contact with the graphitic carbon film. Numerous other aspects are provided.


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