The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Apr. 14, 2010
Franz Kreupl, Mountain View, CA (US);
Er-xuan Ping, Fremont, CA (US);
Jingyan Zhang, Santa Clara, CA (US);
Huiwen Xu, Sunnyvale, CA (US);
Franz Kreupl, Mountain View, CA (US);
Er-Xuan Ping, Fremont, CA (US);
Jingyan Zhang, Santa Clara, CA (US);
Huiwen Xu, Sunnyvale, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
In a first aspect, a method of forming a metal-insulator-metal ('MIM') stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.