The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2013
Filed:
Dec. 22, 2010
Huiwen Xu, Sunnyvale, CA (US);
Mei-yee Shek, Mountain View, CA (US);
Li-qun Xia, Santa Clara, CA (US);
Amir Al-bayati, San Jose, CA (US);
Derek Witty, Fremont, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Huiwen Xu, Sunnyvale, CA (US);
Mei-Yee Shek, Mountain View, CA (US);
Li-Qun Xia, Santa Clara, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Derek Witty, Fremont, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed from the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and/or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.