The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2013

Filed:

Oct. 29, 2009
Applicants:

Er-xuan Ping, Fremont, CA (US);

Huiwen Xu, Sunnyvale, CA (US);

April D. Schricker, Palo Alto, CA (US);

Wipul Pemsiri Jayasekara, Los Gatos, CA (US);

Inventors:

Er-Xuan Ping, Fremont, CA (US);

Huiwen Xu, Sunnyvale, CA (US);

April D. Schricker, Palo Alto, CA (US);

Wipul Pemsiri Jayasekara, Los Gatos, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods in accordance with this invention form a microelectronic structure by forming a carbon nano-tube ('CNT') layer, and forming a carbon layer ('carbon liner') above the CNT layer, wherein the carbon liner comprises: (1) a first portion disposed above and in contact with the CNT layer; and/or (2) a second portion disposed in and/or around one or more carbon nano-tubes in the CNT layer. Numerous other aspects are provided.


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