The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Nov. 19, 2010
Ganesh Balasubramanian, Sunnyvale, CA (US);
Amit Bansal, Santa Clara, CA (US);
Eller Y. Juco, San Jose, CA (US);
Mohamad Ayoub, San Jose, CA (US);
Hyung-joon Kim, Sunnyvale, CA (US);
Karthik Janakiraman, San Jose, CA (US);
Sudha Rathi, San Jose, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Martin Jay Seamons, San Jose, CA (US);
Visweswaren Sivaramakrishnan, Cupertino, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Amir Al-bayati, San Jose, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Anton Baryshnikov, San Jose, CA (US);
Chiu Chan, Foster City, CA (US);
Shuang Liu, Saratoga, CA (US);
Ganesh Balasubramanian, Sunnyvale, CA (US);
Amit Bansal, Santa Clara, CA (US);
Eller Y. Juco, San Jose, CA (US);
Mohamad Ayoub, San Jose, CA (US);
Hyung-Joon Kim, Sunnyvale, CA (US);
Karthik Janakiraman, San Jose, CA (US);
Sudha Rathi, San Jose, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Martin Jay Seamons, San Jose, CA (US);
Visweswaren Sivaramakrishnan, Cupertino, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Anton Baryshnikov, San Jose, CA (US);
Chiu Chan, Foster City, CA (US);
Shuang Liu, Saratoga, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.