The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2013
Filed:
Mar. 01, 2010
Alexandros T. Demos, Fremont, CA (US);
Li-qun Xia, Cupertino, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'saad, Sunnyvale, CA (US);
Alexandros T. Demos, Fremont, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'Saad, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure including depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.