The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Dec. 14, 2006
Mihaela Balseanu, Sunnyvale, CA (US);
Victor T. Nguyen, Novato, CA (US);
Li-qun Xia, Cupetino, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Victor T. Nguyen, Novato, CA (US);
Li-Qun Xia, Cupetino, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
Derek R. Witty, Fremont, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for forming a compressive stress carbon-doped silicon nitride layer is provided. The method includes forming an initiation layer and a bulk layer thereon, wherein the bulk layer has a compressive stress of between about −0.1 GPa and about −10 GPa. The initiation layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor and optionally a nitrogen and/or source but does not include hydrogen gas. The bulk layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor, a nitrogen source, and hydrogen gas. The initiation layer is a thin layer that allows good transfer of the compressive stress of the bulk layer therethrough to an underlying layer, such as a channel of a transistor.