The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2010
Filed:
Oct. 22, 2008
Mihaela Balseanu, Sunnyvale, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
Li-qun Xia, Cupertino, CA (US);
Atif Noori, Saratoga, CA (US);
Reza Arghavani, Scotts Valley, CA (US);
Derek R. Witty, Fremont, CA (US);
Amir Al-bayati, San Jose, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Atif Noori, Saratoga, CA (US);
Reza Arghavani, Scotts Valley, CA (US);
Derek R. Witty, Fremont, CA (US);
Amir Al-Bayati, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A flash memory device and method of forming a flash memory device are provided. The flash memory device includes a silicon nitride layer having a compositional gradient in which the ratio of silicon to nitrogen varies through the thickness of the layer. The silicon nitride layer having a compositional gradient of silicon and nitrogen provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.