The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Jun. 04, 2010
Yong-won Lee, San Jose, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
Mei-yee Shek, Palo Alto, CA (US);
Li-qun Xia, Cupertino, CA (US);
Prahallad Iyengar, Mountain View, CA (US);
Sanjeev Baluja, Campbell, CA (US);
Scott a Hendrickson, Brentwood, CA (US);
Juan Carlos Rocha-alvarez, San Carlos, CA (US);
Thomas Nowak, Cupertino, CA (US);
Derek R Witty, Fremont, CA (US);
Yong-Won Lee, San Jose, CA (US);
Vladimir Zubkov, Mountain View, CA (US);
Mei-Yee Shek, Palo Alto, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Prahallad Iyengar, Mountain View, CA (US);
Sanjeev Baluja, Campbell, CA (US);
Scott A Hendrickson, Brentwood, CA (US);
Juan Carlos Rocha-Alvarez, San Carlos, CA (US);
Thomas Nowak, Cupertino, CA (US);
Derek R Witty, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.