Low dielectric constant fluorine and carbon-containing silicon oxide dielectric material characterized by improved resistance to oxidation

Abstract

The invention provides a process for forming a low k fluorine and carbon-containing silicon oxide dielectric material by reacting with an oxidizing agent one or more silanes containing one or more organofluoro silanes having the formula SiRRRR, where: (a) Ris selected from H, a 3 to 10 carbon alkyl, and an alkoxy; (b) Rcontains at least one C atom bonded to at least one F atom, and no aliphatic C—H bonds; and (c) Rand Rare selected from H, alkyl, alkoxy, a moiety containing at least one C atom bonded to at least one F atom, and ((L)Si(R)(R))(R); where n ranges from 1 to 10; L is O or CFR; each n Rand Ris selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom; Ris selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom; and each Ris selected from H, alkyl, alkoxy, and a moiety containing at least one C atom bonded to at least one F atom. Also provided is a low dielectric constant fluorine and carbon-doped silicon oxide dielectric material for use in an integrated circuit structure which contains: silicon atoms bonded to oxygen atoms; silicon atoms bonded to carbon atoms; and carbon atoms bonded to fluorine atoms; where the dielectric material also has a characteristic selected from: (a) the presence of at least one C—C bond; (b) the presence of at least one carbon atom bonded to from 1 to 2 fluorine atoms; and (c) the presence of at least one silicon atom bonded to from 0 to 2 oxygen atoms.