The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Mar. 02, 2016
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Yunsang Kim, Monte Sereno, CA (US);
Reza Arghavani, Scotts Valley, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/324 (2006.01); H01L 29/66 (2006.01); H01L 21/225 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 21/288 (2006.01);
U.S. Cl.
CPC ...
H01L 29/45 (2013.01); H01L 21/2252 (2013.01); H01L 21/288 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/324 (2013.01); H01L 29/66795 (2013.01);
Abstract
Methods of doping semiconductor substrates using deposition of a rare earth metal-containing film such as an yttrium-containing film, and annealing techniques are provided herein. Rare earth metal-containing films are deposited using gas, liquid, or solid precursors without a bias and may be deposited conformally. Some embodiments may involve deposition using a plasma. Substrates may be annealed at temperatures less than about 500° C.