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For the Inventor, By the Inventor

Hopewell Junction, NY, United States of America

Mukta G Farooq

This inventor holds 232 USPTO granted patents and 62 published patent applications and 2 EPO patents, primarily in Semiconductor Integration (CPC class H01L23-481). Top assignees: International Business Machines Corporation, Globalfoundries Inc., Globalfoundries U.S. Inc.. Active years: 2001-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mukta G Farooq. Retrieved from https://idiyas.com/inventor/mukta-g-farooq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 232 

% Patents Active = 59.5

 

Average Co-Inventor Count = 3.3

ph-index = 17

Forward Citations = 1,890(Granted Patents)

Forward Citations (Not Self Cited) = 1,696(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Wappingers Falls, NY (US) (2008)
  • Hopewell Jct., NY (US) (2012 - 2015)
  • Hopewell Junction, VT (US) (2018 - 2020)
  • Hopewell Junction, NY (US) (2001 - 2024)
  • Hopewell Jct, NY (US) (2019 - 2024)

Company Filing History:

goldMedal197 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal33 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 1,090 
 
Globalfoundries U.S. Inc.
 patents
4. 1 out of 138 
 
Ultratech, Inc.
 patents

Years Active: 2001-2026

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Areas of Expertise:
Heterogeneous Integration
Voltage Regulation
Thermally Conducting Regions
Chip Assembly
Redistribution Wiring
Stacked Devices
Power Distribution
Sintering Techniques
Electromigration Monitor
Multi-Chip Modules
AI Computing
Interconnects
232 patents (USPTO):Explore Patents
1. 12745683 - Multi-chip high memory bandwidth configuration (2026-09-22),
2. 12713961 - BONDED STRUCTURE HAVING DIFFUSED METAL OXIDE MATERIAL SURROUNDING MISALIGNED BOND PADS OR BOND PADS OF DIFFERENT SIZES AND METHOD OF MANUFACTURING THEREOF (2026-08-18),
3. 12677640 - Structure for monitoring hybrid bonds in a semiconductor chip package (2026-07-07),
4. 12656390 - Active bridge-based chiplet interconnect architecture with short-to-long converter circuit (2026-06-16),
5. 12581663 - Heterogeneous integration structure with voltage regulation (2026-03-17),
6. 12568846 - Wafer dies with thermally conducting perimeter regions (2026-03-03),
7. 12550715 - Heterogeneous integration of device die having BSPDN (2026-02-10),
8. 12519076 - Assembly of a chip to a substrate (2026-01-06),
9. 12469787 - Resist patterned redistribution wiring on copper polyimide via layer (2025-11-11),
10. 12451431 - Stacked semiconductor devices with topside and backside interconnect wiring (2025-10-21),
11. 12438046 - Dual redistribution layer structure (2025-10-07),
12. 12431408 - TSV and backside power distribution structure (2025-09-30),
13. 12300615 - Infrared debond damage mitigation by copper fill pattern (2025-05-13),
14. 12199059 - Sintering a nanoparticle paste for semiconductor chip join (2025-01-14),
15. 12106969 - Substrate thinning for a backside power distribution network (2024-10-01),

Title: The Inventive Journey of Mukta G. Farooq in Semiconductor Technologies

Introduction: Mukta G. Farooq, a talented inventor based in Hopewell Junction, NY, has left an indelible mark in the field of semiconductor technologies with an impressive portfolio of 217 patents. His groundbreaking innovations continue to shape the landscape of high-density interconnection and wiring layers in the semiconductor industry.

Latest Patents:

1. "Semiconductor device with early buried power rail (BPR) and backside power distribution network (BSPDN)": This patent showcases a novel semiconductor structure that optimizes power distribution networks, field effect transistors, and electrical paths to enhance performance and efficiency.

2. "High density interconnection and wiring layers, package structures, and integration methods": Farooq's innovative interconnect design for semiconductor devices incorporates laminate substrates, redistribution layers, and transmission lines to improve connectivity and functionality.

Career Highlights: With a distinguished career that includes tenures at renowned companies such as IBM (International Business Machines Corporation) and Globalfoundries Inc., Farooq has consistently pushed the boundaries of semiconductor technology. His inventive spirit and technical expertise have been instrumental in driving advancements in the industry.

Collaborations: Farooq's collaborations with industry experts like John Anthony Fitzsimmons and Kevin Shawn Petrarca have been instrumental in bringing his visionary ideas to fruition. Together, they have worked on cutting-edge projects that have redefined semiconductor design and integration methodologies.

Conclusion: Mukta G. Farooq's remarkable journey as an inventor in semiconductor technologies stands as a testament to his innovative prowess and dedication to advancing the field. His impactful patents and collaborations continue to inspire future generations of inventors and engineers in the ever-evolving world of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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