The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Mar. 18, 2021
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Mukta Ghate Farooq, Hopewell Junction, NY (US);
Julien Frougier, Albany, NY (US);
Takeshi Nogami, Schenectady, NY (US);
Roy R. Yu, Poughkeepsie, NY (US);
Kangguo Cheng, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of manufacturing a semiconductor device is provided. The method includes forming a first recess partially through a substrate from a first side of the substrate, forming a dielectric layer in the first recess, forming a second recess partially through the dielectric layer from the first side of the substrate, and forming a buried power rail (BPR) in the second recess of the dielectric layer. The method also includes thinning the substrate from a second side of the substrate to a level of the dielectric layer, the second side of the substrate being opposite to the first side of the substrate.