Schenectady, NY, United States of America

Takeshi Nogami

USPTO Granted Patents = 191 

 

Average Co-Inventor Count = 3.2

ph-index = 24

Forward Citations = 2,918(Granted Patents)

DiyaCoin DiyaCoin 6.70 


Inventors with similar research interests:


Location History:

  • Sunnyvale, CA (US) (1999 - 2003)
  • Atsugi, JP (2000 - 2003)
  • Kanagawa, JP (2000 - 2007)
  • Chappaqua, NY (US) (2007)
  • Hartsdale, NY (US) (2007 - 2009)
  • Hopewell Junction, NY (US) (2007 - 2013)
  • Shchenectady, NY (US) (2014)
  • Schnectady, NY (US) (2014)
  • Albany, NY (US) (2011 - 2018)
  • Armonk, NY (US) (2020 - 2021)
  • Schenectady, NY (US) (2010 - 2024)

Company Filing History:


Years Active: 1999-2025

where 'Filed Patents' based on already Granted Patents

191 patents (USPTO):

Title: Takeshi Nogami: Innovator Extraordinaire in Interconnect Technologies

Introduction:

Takeshi Nogami, a highly accomplished inventor hailing from Schenectady, New York, has been at the forefront of numerous innovations in the field of interconnect technologies. With an impressive track record and 181 patents to his name, Nogami has made remarkable contributions to the semiconductor industry. In this article, we delve into his latest patents, noteworthy career highlights, collaborations with eminent colleagues, and the impact of his pioneering work.

Latest Patents:

Nogami's inventive prowess shines through in his latest patents, which highlight his expertise in interconnect fabrication and barrier formation. One groundbreaking patent is for "Topological semi-metal interconnects," a method that incorporates a topological semi-metal layer, enabling the formation of efficient and reliable interconnects. The integration of dielectric layers and hermetic dielectric caps further enhances performance and reliability.

Another notable patent is for the "Self-forming barrier for use in air gap formation." This innovative process involves the formation of etch back air gap structures, incorporating a chemical- and plasma-attack immune material. By impregnating metallic interconnect materials with dopants and subsequent drive-out annealing, Nogami's method achieves exceptional barrier properties, improving device longevity and reliability.

Career Highlights:

Throughout his career, Takeshi Nogami has made significant contributions to the field of interconnect technologies. Much of his groundbreaking work was accomplished during his tenure at renowned organizations such as IBM and Advanced Micro Devices Corporation (AMD). Working in collaboration with leading experts, Nogami has consistently pushed the boundaries of conventional interconnect fabrication techniques, resulting in improved performance and reliability of semiconductor devices.

Collaborations:

Nogami's noteworthy collaborations with esteemed colleagues have played a pivotal role in his success and the advancement of interconnect technologies. Notably, he has worked closely with Daniel C. Edelstein, an accomplished inventor known for his work in semiconductor device structures and materials. Their collaborative efforts have likely led to significant breakthroughs, contributing to the development of more efficient and reliable interconnects.

Additionally, Nogami has collaborated with Chih-Chao Yang, another luminary in the field of semiconductor materials and structures. Their joint expertise and complementary skills have undoubtedly fueled innovation, resulting in advancements that benefit the semiconductor industry as a whole.

Conclusion:

Takeshi Nogami's immense talent and innovative spirit have propelled him to the forefront of interconnect technologies. His extensive patent portfolio speaks volumes about his contributions to the semiconductor industry. Through his groundbreaking work in interconnect fabrication and barrier formation, he has significantly improved the performance and reliability of semiconductor devices. With a remarkable career spanning influential organizations and fruitful collaborations, Nogami continues to push the boundaries of what is possible, leaving an indelible mark on the world of innovations and patents.

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