The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Mar. 31, 2022
Applicant:

Tessera Llc, San Jose, CA (US);

Inventors:

Cyril Cabral, Jr., Mahopac, NY (US);

Daniel C. Edelstein, White Plains, NY (US);

Juntao Li, Guilderland, NY (US);

Takeshi Nogami, Schenectady, NY (US);

Assignee:

TESSERA LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76846 (2013.01); H01L 21/76831 (2013.01); H01L 21/76843 (2013.01); H01L 21/76855 (2013.01); H01L 21/76858 (2013.01); H01L 21/76867 (2013.01); H01L 21/76871 (2013.01); H01L 23/528 (2013.01); H01L 23/53223 (2013.01); H01L 23/53233 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Interconnect structures containing metal oxide embedded diffusion barriers and methods of forming the same. Interconnect structures may include an Mlevel including an Mmetal in an Mdielectric, an Mlevel above the Mlevel including an Mmetal in an Mdielectric, an embedded diffusion barrier adjacent to the Mdielectric; and a seed alloy region adjacent to the Mmetal separating the Mmetal from the Mmetal. The embedded diffusion barrier may include a barrier-forming material such as manganese, aluminum, titanium, or some combination thereof. The seed alloy region may include a seed material such as cobalt, ruthenium, or some combination thereof.


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