The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 31, 2022

Filed:

Nov. 21, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Benjamin D. Briggs, Waterford, NY (US);

Lawrence A. Clevenger, Saratoga Springs, NY (US);

Nicholas A. Lanzillo, Saratoga Springs, NY (US);

Takeshi Nogami, Schenectady, NY (US);

Christopher J. Penny, Saratoga Springs, NY (US);

Michael Rizzolo, Delmar, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76846 (2013.01); H01L 21/76867 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 2221/1036 (2013.01);
Abstract

A semiconductor device is provided and includes first and second dielectrics, first and second conductive elements, a self-formed-barrier (SFB) and a liner. The first and second dielectrics are disposed with one of first-over-second dielectric layering and second-over-first dielectric layering. The first and second conductive elements are respectively suspended at least partially within a lower one of the first and second dielectrics and at least partially within the other one of the first and second dielectrics. The self-formed-barrier (SFB) is formed about a portion of one of the first and second conductive elements which is suspended in the second dielectric. The liner is deposited about a portion of the other one of the first and second conductive elements which is partially suspended in the first dielectric.


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