The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Sep. 22, 2021
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Brent Anderson, Jericho, VT (US);
Albert M. Young, Fishkill, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Julien Frougier, Albany, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Roy R. Yu, Poughkeepsie, NY (US);
Takeshi Nogami, Schenectady, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device includes a dielectric isolation layer, a plurality of gates formed above the dielectric isolation layer, a plurality of source/drain regions above the dielectric isolation layer between the plurality of gates, and at least one contact placeholder for a backside contact. The at least one contact placeholder contacts a bottom surface of a first source/drain region of the plurality of source/drain regions. The semiconductor device further includes at least one backside contact contacting a bottom surface of a second source/drain region of the plurality of source/drain regions, and a buried power rail arranged beneath, and contacting the at least one backside contact.