The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2024
Filed:
Jun. 09, 2021
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Takeshi Nogami, Schenectady, NY (US);
Roy R. Yu, Poughkeepsie, NY (US);
Balasubramanian Pranatharthiharan, Watervliet, NY (US);
Albert M. Young, Fishkill, NY (US);
Kisik Choi, Watervliet, NY (US);
Brent Anderson, Jericho, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of manufacturing a semiconductor device is provided. The method includes forming a first trench partially through a first substrate from a first side of the first substrate. The method also includes widening a bottom portion of the first trench to form a lateral footing area of the first trench. The method includes forming a first metallization in the first trench; forming a second trench through a second substrate from a second side of the second substrate to expose at least a portion of first metallization in an area corresponding to the lateral footing area of the first trench, the second side being opposite to the first side. The method also includes forming a second metallization in the second trench in contact with the first metallization.