The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2023

Filed:

Aug. 31, 2020
Applicant:

Tessera Llc, San Jose, CA (US);

Inventors:

Benjamin D. Briggs, Waterford, NY (US);

Elbert Huang, Carmel, NY (US);

Takeshi Nogami, Schenectady, NY (US);

Christopher J. Penny, Saratoga Springs, NY (US);

Assignee:

TESSERA LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/321 (2006.01); H01L 21/3215 (2006.01); H01L 21/3115 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76883 (2013.01); H01L 21/3115 (2013.01); H01L 21/321 (2013.01); H01L 21/3215 (2013.01); H01L 21/7682 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76843 (2013.01); H01L 21/76864 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 21/76849 (2013.01); H01L 23/5222 (2013.01);
Abstract

An etch back air gap (EBAG) process is provided. The EBAG process includes forming an initial structure that includes a dielectric layer disposed on a substrate and a liner disposed to line a trench defined in the dielectric layer. The process further includes impregnating a metallic interconnect material with dopant materials, filling a remainder of the trench with the impregnated metallic interconnect materials to form an intermediate structure and drive-out annealing of the intermediate structure. The drive-out annealing of the intermediate structure serves to drive the dopant materials out of the impregnated metallic interconnect materials and thereby forms a chemical- and plasma-attack immune material.


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