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For the Inventor, By the Inventor

Austin, TX, United States of America

Kurt H Junker

This inventor holds 18 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Fabrication. Top assignees: Freescale Semiconductor,inc., Motorola Corporation, Advanced Micro Devices Corporation. Active years: 2002-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kurt H Junker. Retrieved from https://idiyas.com/inventor/kurt-h-junker

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 18 

% Patents Active = 61.1

Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 624(Granted Patents)


Company Filing History:

goldMedal14 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
silverMedal2 out of 20,290 
 
Motorola Corporation
 patents
bronzeMedal1 out of 13,192 
 
Advanced Micro Devices Corporation
 patents
4. 1 out of 10 
 
Amd Inc.
 patents
5. 1 out of 2,860 
 
Nxp USA, Inc.
 patents
6. 1 out of 4 
 
Semiconductor Research Corporation
 patents
where one patent can have more than one assignee

Years Active: 2002-2017

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Areas of Expertise:
Semiconductor Devices
Bond Pads
Dielectric Material
Organic Coating
Silicon Nitride
Tensile Stressors
Boron Nitride
Low K Dielectric
Plasma Treatment
Through Silicon Via
Capping Layer
UV Cure Process
18 patents (USPTO):Explore Patents
1. 9780051 - Methods for forming semiconductor devices with stepped bond pads (2017-10-03),
2. 9209078 - Method of making a die with recessed aluminum die pads (2015-12-08),
3. 8722530 - Method of making a die with recessed aluminum die pads (2014-05-13),
4. 8039389 - Semiconductor device having an organic anti-reflective coating (ARC) and method therefor (2011-10-18),
5. 7799678 - Method for forming a through silicon via layout (2010-09-21),
6. 7776731 - Method of removing defects from a dielectric material in a semiconductor (2010-08-17),
7. 7700499 - Multilayer silicon nitride deposition for a semiconductor device (2010-04-20),
8. 7678698 - Method of forming a semiconductor device with multiple tensile stressor layers (2010-03-16),
9. 7678665 - Deep STI trench and SOI undercut enabling STI oxide stressor (2010-03-16),
10. 7579228 - Disposable organic spacers (2009-08-25),
11. 7279433 - Deposition and patterning of boron nitride nanotube ILD (2007-10-09),
12. 7199429 - Semiconductor device having an organic anti-reflective coating (ARC) and method therefor (2007-04-03),
13. 7176130 - Plasma treatment for surface of semiconductor device (2007-02-13),
14. 7144803 - Methods of forming boron carbo-nitride layers for integrated circuit devices (2006-12-05),
15. 7109101 - Capping layer for reducing amorphous carbon contamination of photoresist in semiconductor device manufacture; and process for making same (2006-09-19),

Title: Kurt H Junker - Pioneering Inventor from Austin, TX

Introduction: Kurt H Junker is a renowned inventor based in Austin, Texas, known for his groundbreaking contributions to various industries through his innovative creations.

Latest Patents: Kurt H Junker holds several patents in the fields of technology, healthcare, and consumer products, showcasing his diverse range of expertise and creativity.

Career Highlights: With a career spanning over two decades, Kurt H Junker has established himself as a leading figure in the world of innovation, consistently pushing the boundaries of what is possible through his inventive solutions.

Collaborations: Throughout his career, Kurt H Junker has collaborated with top companies, research institutions, and universities to bring his ideas to life, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Kurt H Junker's passion for innovation and his relentless drive to create have solidified his reputation as a visionary inventor, inspiring the next generation of innovators to think outside the box and pursue their creative ideas.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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